1996 data sheet document no. p11673ej1v0ds00 (1st edition) date published august 1996 p printed in japan silicon transistor 2sC3587 the 2sC3587 is an npn epitaxial transistor designed for low- noise amplification at 0.5 to 6.0 ghz. this transistor has low-noise and high-gain characteristics in a wide collector current region, and has a wide dynamic range. features low noise : nf = 1.7 db typ. @ f = 2 ghz nf = 2.6 db typ. @ f = 4 ghz high power gain : g a = 12.5 db typ. @ f = 2 ghz g a = 8.0 db typ. @ f = 4 ghz absolute maximum ratings (t a = 25 c) electrical characteristics (t a = 25 c) npn epitaxial silicon transistor for microwave low-noise amplification package dimensions (in mm) 3.8 min. e cb e 45 0.5 0.05 0.5 0.05 0.1 +0.06 -0.03 2.55 0.2 2.1 f 3.8 min. 3.8 min. 3.8 min. 1.8 max. 0.55 pin connections e: emitter c: collector b: base parameter symbol rating unit collector to base voltage v cbo 20 v collector to emitter voltage v ceo 10 v emitter to base voltage v ebo 1.5 v collector current i c 35 ma total power dissipation p t (t c = 25 c) 580 mw junction temperature t j 200 c storage temperature t stg - 65 to +150 c parameter symbol test conditions min. typ. max. unit collector cut-off current i cbo v cb = 10 v 1.0 m a emitter cut-off current i ebo v eb = 1 v 1.0 m a dc current gain h fe v ce = 6 v, i c = 10 ma pulse 50 100 250 gain bandwidth product f t v ce = 6 v, i c = 10 ma 10.0 ghz reverse transfer capacitance c re v cb = 10 v, f = 1 mhz 0.2 0.7 pf noise figure nf note v ce = 6 v, i c = 5 ma f = 2 ghz 1.7 2.4 db f = 4 ghz 2.6 db insertion gain |s 21e | 2 v ce = 6 v, i c = 10 ma f = 2 ghz 10.5 12.5 db f = 4 ghz 7.5 db maximum available gain mag v ce = 6 v, i c = 10 ma, f = 4 ghz 10 db power gain g a v ce = 6 v, i c = 5 ma f = 2 ghz 12.5 db f = 4 ghz 8.0 db
2 2sC3587 note test block diagram noise diode coax. sw coax. sw post amp mixer * nf meter network analyzer coax. sw stub tuner bias tee bias tee transistor under test sweeper to test 1 ghz or lower, insert a bandpass filter. * typical characteristics (t a = 25 c) total power dissipation vs. ambient temperature mag and insertion gain vs. frequency reverse transfer capacitance vs. collector to base voltage dc current gain vs. collector current 0.8 0.6 0.4 0.2 0 3 200 100 50 20 10 2 1 0.7 0.5 0.3 0.2 0.1 1235 v cb - collector to base voltage -v 710 20 30 50 100 f = 1.0 mhz t a - ambient temperature - c 150 0.1 - 5 0 5 10 15 20 25 0.2 0.5 1 0.5 1 5 i c - collector current - ma 10 50 f - frequency - ghz |s 21e | 2 - insertion gain - db mag - maximum available gain - db 2510 200 p t - total power dissipation - w c re - reverse transfer capacitance - pf h fe - dc current gain with heat sink r th(j - e) 90 c/w v ce = 6 v i c = 10 ma v ce = 6 v mag r th(j - a) 590 c/w |s 21e | 2
3 2sC3587 s parameter v ce = 6 v, i c = 10 ma, z o = 50 w f (mhz) |s 11 | e s 11 |s 21 | e s 21 |s 12 | e s 12 |s 22 | e s 22 500 .466 - 82.1 13.209 120.8 .0288 50.9 .634 - 25.0 1000 .322 - 123.8 8.371 95.7 .0424 54.2 .610 - 29.4 1500 .271 - 153.7 5.672 78.7 .0561 54.5 .579 - 33.5 2000 .256 - 176.6 4.304 66.9 .0697 54.1 .549 - 38.7 2500 .262 167.3 3.456 58.6 .0848 51.9 .531 - 46.2 3000 .270 152.0 3.095 46.1 .0955 48.0 .507 - 52.8 3500 .294 142.0 2.595 35.0 .106 43.2 .498 - 61.0 4000 .327 129.7 2.231 27.6 .127 35.2 .500 - 68.4 insertion gain vs. collector current noise figure vs. collector current gain bandwidth product vs. collector current 15 6 5 4 3 2 1 2 5 10 20 50 10 5 30 20 10 7 5 3 2 0 0.5 1 12357102030 5 ic - collector current - ma ic - collector current - ma ic - collector current - ma 10 50 70 |s 21e | 2 - insertion gain - db nf - noise figure -db f t - gain bandwidth product - ghz v ce = 6 v v ce = 6 v v ce = 6 v f = 2 ghz 3 ghz 4 ghz f = 4 ghz f = 2 ghz
4 2sC3587 s parameter 90 100 110 120 130 140 150 - 160 - 150 - 140 - 130 - 120 - 110 - 100 - 90 - 80 - 70 - 60 - 50 - 40 - 30 - 20 - 10 0 0.25
0.25 0.24
0.26 0.23
0.27 0.22
0.28 0.21
0.29 0.20
0.30 0.19
0.31 0.18
0.32 0.17
0.33 0.16
0.34 0.15
0.35 0.14
0.36 0.13
0.37 0.12
0.35 0.11
0.39 0.10
0.40 0.09
0.41 0.08
0.42 0.07
0.43 0.06
0.44 0.05
0.45 0.04
0.46 0.03
0.47 0.02
0.48 0.01
0.49 0
0 0.49
0.01 0.48
0.02 0.47
0.03 0.46
0.04 0.45
0.05 0.44
0.06 0.43
0.07 0.42
0.08 0.41
0.09 0.40
0.10 0.39
0.11 0.38
0.12 0.37
0.13 0.36
0.14 0.35
0.15 0.34
0.16 0.33
0.17 0.32
0.18 0.31
0.19 0.30
0.20 0.29
0.21 0.28
0.22 0.27
0.23 0.26
0.24 10 20 30 40 50 60 70 80 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.1 0.6 0.7 0.8 0.9 1.0 1.2 1.4 1.6 1.8 2.0 3.0 4.0 5.0 10 20 50 50 20 10 5.0 4.0 3.0 2.0 1.8 1.4 1.2 0.2 0.4 0.6 0.8 1.0 1.0 0.8 0.6 0.4 0.2 0.2 0.4 0.6 0.8 1.0 1.0 0.8 0.6 0.4 0.2 reststance component r
z o a n g l e o f r e f l e c t i o n c o e f f i c i e n t i n d e g r e e s w a v e l e n g t h s t o w a r d l o a d w a v e l e n g t h s t o w r r d g e n e l a t o r m e g a t i v e r e a c t a n c e c o m p o n e n t 0.2 0.3 0.4 0.5 m e g a t i v e r e a c t a n c e c o m p o n e n t +jx
z o - jx
z o 4 ghz 4 ghz 0.5 ghz 0.5 ghz 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.2 1.6 1.8 2.0 3.0 4.0 5.0 10 20 50 1.4 s 11e s 22e s 11e , s 22e - frequency v ce = 6 v
i c = 10 ma
500 mhz step s 21 - frequency 0.5 ghz 90 120 150 60 30 0 10 4 ghz 180 - 150 - 120 - 90 - 60 - 30 v ce = 6 v
i c = 10 ma
500 mhz step s 12 - frequency 90 120 150 60 30 0 180 - 150 - 120 - 90 - 60 - 30 v ce = 6 v
i c = 10 ma
500 mhz step 5 0.1 0.05 4 ghz 0.5 ghz
5 2sC3587 [memo]
6 2sC3587 [memo]
7 2sC3587 [memo]
6 2sC3587 the export of this product from japan is prohibited without governmental license. to export or re-export this product from a country other than japan may also be prohibited without a license from that country. please call an nec sales representative. no part of this document may be copied or reproduced in any form or by any means without the prior written consent of nec corporation. nec corporation assumes no responsibility for any errors which may appear in this document. nec corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. no license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of nec corporation or others. while nec corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. to minimize risks of damage or injury to persons or property arising from a defect in an nec semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. nec devices are classified into the following three quality grades: "standard", "special", and "specific". the specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. the recommended applications of a device depend on its quality grade, as indicated below. customers must check the quality grade of each device before using it in a particular application. standard: computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots special: transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) specific: aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. the quality grade of nec devices is "standard" unless otherwise specified in nec's data sheets or data books. if customers intend to use nec devices for applications other than those specified for standard quality grade, they should contact an nec sales representative in advance. anti-radioactive design is not implemented in this product. m4 96.5
|
